Role of Titanium Suicide at the Early Stage of Growth of TiO_2 on a Silicon Substrate
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概要
- 論文の詳細を見る
Initial growth stage of TiO_2 on a silicon substrate was studied by a plasma-enhanced chemical vapor deposition system with in-situ observation equipment using laser Raman spectroscopy. The TiO_2 film on the substrate was grown laterally at the early stage of the growth. It was found, via in-situ observation, that titanium silicide was formed simultaneously. Furthermore, the growth mode changed suddenly from lateral to vertical and the titanium suicide disappeared with the progression of growth time. The titanium suicide plays an important role in the formation process of TiO_2 and determines the growth mode, structure, stress and surface roughness of TiO_2 grown on the Si substrate.
- 社団法人応用物理学会の論文
- 2002-09-15
著者
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KATODA Takashi
Department of Electronic and Photonic Systems Engineering, Kochi University of Technology
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Nishida Ken
Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology
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Katoda Takashi
Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology
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MORISAWA Kirihiko
Department of Electronic and Photonic Systems Engineering, Kochi University of Technology Department
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Morisawa Kirihiko
Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology Department
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Nishida Ken
Department of Communicating Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
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Katoda Takashi
Department of Electronic and Photonic System Engineering, Kochi University of Technology, 185 Tosayamada-cho, Kami, Kochi 782-8502, Japan
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