The Effects of Nodular Colloidal Silica on Chemical Mechanical Polishing
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概要
- 論文の詳細を見る
Nodular colloidal silica is proposed to be used as a consumable material for the chemical mechanical polishing (CMP). The typical spherical colloidal silica slurry is effective in decreasing both the defect level and the surface roughness of the semiconductor interlayer dielectric (ILD) film during CMP, but the removal rate is also decreased. Hence, the nodular colloidal silica slurry has been developed for the purpose of improving the removal rate of silicon substrate. A few of particles of the nodular colloidal silica slurry are associated with the active porous surface. The surface characteristics of the silica particles are considered to affect the removal rate of the plasma-tetra-ethoxy-silane (p-TEOS) interlayer dielectric film. In particular in the acidic condition, the nodular colloidal silica slurry yields a high removal rate with p-TEOS film, while in the alkaline condition, it yields a lower removal rate due to the surface morphology change. These CMP performances are recognized to depend on the different characteristics between the spherical colloidal and fumed silica.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-08-15
著者
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Kobuchi Yasushi
Rodel-nitta Company
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HONG Gisik
Rodel-Nitta Company
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MORIOKA Yoshitaka
Rodel-Nitta Company
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Haba Shinichi
Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology
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Katoda Takashi
Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology
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Morioka Yoshitaka
Rodel-Nitta Company, Yamatokoriyama-shi, Nara, Japan
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Haba Shinichi
Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, Tosayamada-cho, Kami-gun, Kochi, Japan
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Katoda Takashi
Department of Electronic and Photonic System Engineering, Kochi University of Technology, 185 Tosayamada-cho, Kami, Kochi 782-8502, Japan
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Hong Gisik
Rodel-Nitta Company, Yamatokoriyama-shi, Nara, Japan
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