Photoabsorption Characterization on Surface InAs Nanostructures Using Light-Illuminated Scanning Tunneling Microscopy

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概要

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• We characterized surface InAs nanostructures grown on a GaAs vicinal substrate by using scanning tunneling microscopy (STM) under light illumination. In local photoinduced current imaging with a DC bias voltage, the photoabsorption signals on InAs nanowires could not be detected when the illuminated photon energy was adjusted between the band gaps of GaAs and InAs, due to electrical isolation of the surface InAs from the conductive substrate. On the other hand, imaging an optical response of differential conductance with AC bias modulation revealed a clear contrast between InAs nanowires and the surrounding GaAs region without the generation of photocarriers in the underlying GaAs.

• 社団法人応用物理学会の論文
• 2002-07-30

著者

• Takeuchi Minoru

  Joint Research Center For Atom Technology (jrcat):angstrom Technology Partnership (atp):national Ins

• Takada Kyu

  Takatsuki Laboratory Minolta Co. Ltd.

• TAKAHASHI Takuji

  Institute of Industrial Science, University of Tokyo

• TAKADA Kan

  Institute of Industrial Science, University of Tokyo

• TAKEUCHI Misaichi

  Institute of Physical and Chemical Research (RIKEN)

• Takahashi T

  Faculty Of Engineering Shizuoka University

• Takahashi Takuji

  Institute Of Industrial Science University Of Tokyo

• Takahashi Takuji

  Institute of Industrial Science and Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

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• Surface Potential Imaging on InAs Low-Dimensional Nanostructures Studied by Kelvin Probe Force Microscopy
• Kelvin Probe Force Microscopy for Surface Potential Measurements on InAs Nanostructures Grown on (110) GaAs Vicinal Substrates
• Photoabsorption Characterization on Surface InAs Nanostructures Using Light-Illuminated Scanning Tunneling Microscopy
• Light-Illuminated STM Studies on InAs Nano-Structures
• Photoabsorption Properties in InAs Wire Structures Investigated by Dual Light Illumination Method in Scanning Tunneling Microscopy
• Photoassisted Kelvin Probe Force Microscopy on Multicrystalline Si Solar Cell Materials
• Local Characterization of Photovoltage on Polycrystalline Silicon Solar Cells by KFM with Piezo-resistive Cantilever
• Formation of Ultra-low Density (${\leq}10^{4}$ cm-2) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method
• Current-Induced Magnetic Field Detection by Magnetic Force Microscopy around a GaAs/AlGaAs Mesa Stripe
• Ge Doping Effect on Properties of AgInSe_2 Thin Films
• Dual Light Illumination Method in Scanning Tunneling Microscopy for Photoinduced Current Measurements on InAs Wires
• Photothermal Spectroscopic Measurements by Dual Sampling Method in Intermittent-Contact-Mode Atomic Force Microscopy
• Photothermal Signal and Surface Potential around Grain Boundaries in Multicrystalline Silicon Solar Cells Investigated by Scanning Probe Microscopy
• Intermittent Bias Application in Kelvin Probe Force Microscopy for Accurate Determination of Surface Potential
• Sample-and-Hold Operation in Kelvin Probe Force Microscopy
• Lateral Averaging Effects on Surface Potential Measurements on InAs Dots Studied by Kelvin Probe Force Microscopy
• Sample-and-Hold Imaging for Fast Scanning in Atomic Force Microscopy
• Surface Potential Imaging on InAs Low-Dimensional Nanostructures Studied by Kelvin Probe Force Microscopy
• Magnetic Field Observation around Current Path by Magnetic Force Microscopy
• Photovoltage Mapping on Polycrystalline Silicon Solar Cells by Kelvin Probe Force Microscopy with Piezoresistive Cantilever
• Photovoltage Mapping on Polycrystalline Silicon Solar Cells through Potential Measurements by Atomic Force Microscopy with Piezoresistive Cantilever
• Dual-Bias Modulation Method for Scanning Tunneling Spectroscopy

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