Dual-Bias Modulation Method for Scanning Tunneling Spectroscopy
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概要
- 論文の詳細を見る
We proposed a novel method for scanning tunneling spectroscopy, in which a difference in differential conductance ($\mathrm{d}I/\mathrm{d}V$) between two d.c. biases was extracted using a double lock-in technique. We investigated some experimental parameters to be optimized, and finally obtained the spectra of $\mathrm{d}I/\mathrm{d}V$ differences on self-assembled InAs quantum dot structures. As a result, we observed different conductance gaps attributable to a difference between the band gaps of the quantum dot and the surrounding wetting layer, and observed some peaks in the spectra on the dot as well. In addition, reasonable current-voltage curves were numerically reproduced from the measured $\mathrm{d}I/\mathrm{d}V$ spectra.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-07-15
著者
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Muranaka Masayuki
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Takahashi Takuji
Institute of Industrial Science and Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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- Dual-Bias Modulation Method for Scanning Tunneling Spectroscopy