Intermittent Bias Application in Kelvin Probe Force Microscopy for Accurate Determination of Surface Potential
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概要
- 論文の詳細を見る
We propose an intermittent bias application method in Kelvin probe force microscopy (KFM) to suppress electrostatic force variation due to an oscillatory motion of a KFM tip. In this method, spiky biases, instead of the bias in a sinusoidal waveform, which is used in conventional KFM, are intermittently applied to generate electrostatic force at exact moments when the tip approaches the closest position to a sample surface. The observed potential distribution around self-assembled InAs quantum dots indicates that the intermittent bias application method improved the quality of the potential images and that the achieved spatial resolution was estimated to be better than 10 nm.
- 2006-03-15
著者
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Ono Shiano
Institute Of Industrial Science University Of Tokyo
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Takahashi Takuji
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Takahashi Takuji
Institute of Industrial Science and Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Ono Shiano
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
関連論文
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- Light-Illuminated STM Studies on InAs Nano-Structures
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- Photoassisted Kelvin Probe Force Microscopy on Multicrystalline Si Solar Cell Materials
- Local Characterization of Photovoltage on Polycrystalline Silicon Solar Cells by KFM with Piezo-resistive Cantilever
- Formation of Ultra-low Density (${\leq}10^{4}$ cm-2) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method
- Current-Induced Magnetic Field Detection by Magnetic Force Microscopy around a GaAs/AlGaAs Mesa Stripe
- Dual Light Illumination Method in Scanning Tunneling Microscopy for Photoinduced Current Measurements on InAs Wires
- Photothermal Spectroscopic Measurements by Dual Sampling Method in Intermittent-Contact-Mode Atomic Force Microscopy
- Intermittent Bias Application in Kelvin Probe Force Microscopy for Accurate Determination of Surface Potential
- Sample-and-Hold Operation in Kelvin Probe Force Microscopy
- Lateral Averaging Effects on Surface Potential Measurements on InAs Dots Studied by Kelvin Probe Force Microscopy
- Sample-and-Hold Imaging for Fast Scanning in Atomic Force Microscopy
- Surface Potential Imaging on InAs Low-Dimensional Nanostructures Studied by Kelvin Probe Force Microscopy
- Magnetic Field Observation around Current Path by Magnetic Force Microscopy
- Photovoltage Mapping on Polycrystalline Silicon Solar Cells by Kelvin Probe Force Microscopy with Piezoresistive Cantilever
- Photovoltage Mapping on Polycrystalline Silicon Solar Cells through Potential Measurements by Atomic Force Microscopy with Piezoresistive Cantilever
- Dual-Bias Modulation Method for Scanning Tunneling Spectroscopy