Photoabsorption Properties in InAs Wire Structures Investigated by Dual Light Illumination Method in Scanning Tunneling Microscopy
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概要
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The photoabsorption properties of InAs wire structures have been investigated through photoinduced current (PIC) measurements by a dual light illumination method in scanning tunneling microscopy. On InAs wires with a width of around 50 nm, the dependences of the PIC signal on incident photon energy and on a light polarization were examined. A steplike shape in the photoabsorption spectrum, obtained from the photon energy dependence, as well as weak polarization dependence indicate that this wire structure behaved like a quantum well because of a weak lateral confinement effect. On the other hand, apparent polarization dependence was observed on the InAs wires with a width of around 25 nm, which is attributable to an enhancement of structural anisotropy in the thinner wire.
- 2011-08-25
著者
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Takahashi Takuji
Institute of Industrial Science and Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Katsui Shuichi
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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