Kelvin Probe Force Microscopy for Surface Potential Measurements on InAs Nanostructures Grown on (110) GaAs Vicinal Substrates
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Takahashi T
Department Of Electronic Engineering Kogakuin University
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ONO Shiano
Institute of Industrial Science, University of Tokyo
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TAKEUCHI Misaichi
Semiconductors Research Laboratory, RIKEN (The Institute of Physical and Chemical Research)
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TAKAHASHI Takuji
Institute of Industrial Science, University of Tokyo
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Ono Shiano
Institute Of Industrial Science University Of Tokyo
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Takeuchi Misaichi
Semiconductors Research Laboratory Riken (the Institute Of Physical And Chemical Research)
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Takahashi Takuji
Institute Of Industrial Science University Of Tokyo
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Takeuchi Misaichi
Semiconductors Laboratory The Institute Of Physical And Chemical Research (riken)
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Takahashi Takuji
Institute Of Industrial Science The University Of Tokyo
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Takahashi Takuji
Institute of Industrial Science and Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
関連論文
- Investigation of Spatial Resolution in Current-Induced Magnetic Field Detection by Magnetic Force Microscopy
- Computer Simulation of Transition Processes between Bistable States in Bistable Nematic Liquid Crystal Cell Using Breaking Phenomenon of Surface Anchoring
- Surface Potential Imaging on InAs Low-Dimensional Nanostructures Studied by Kelvin Probe Force Microscopy
- Influence of Azimuth Anchoring on Bistable Properties of Bistable Nematic Liquid Crystal Cells(Structure and Mechanical and Thermal Properties of Condensed Matter)
- Transient Behavior of Voltage Holding Ratio in Nematic Liquid Crystal Cells(Optics and Quantum Electronics)
- Kelvin Probe Force Microscopy for Surface Potential Measurements on InAs Nanostructures Grown on (110) GaAs Vicinal Substrates
- Kelvin Probe Force Microscopy on InAs Thin Films on (110) GaAs Substrates
- Photoabsorption Characterization on Surface InAs Nanostructures Using Light-Illuminated Scanning Tunneling Microscopy
- Light-Illuminated STM Studies on InAs Nano-Structures
- Photoabsorption Properties in InAs Wire Structures Investigated by Dual Light Illumination Method in Scanning Tunneling Microscopy
- Photoassisted Kelvin Probe Force Microscopy on Multicrystalline Si Solar Cell Materials
- Local Characterization of Photovoltage on Polycrystalline Silicon Solar Cells by KFM with Piezo-resistive Cantilever
- Formation of Ultra-low Density (${\leq}10^{4}$ cm-2) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method
- Current-Induced Magnetic Field Detection by Magnetic Force Microscopy around a GaAs/AlGaAs Mesa Stripe
- Dual Light Illumination Method in Scanning Tunneling Microscopy for Photoinduced Current Measurements on InAs Wires
- Photothermal Spectroscopic Measurements by Dual Sampling Method in Intermittent-Contact-Mode Atomic Force Microscopy
- Photothermal Signal and Surface Potential around Grain Boundaries in Multicrystalline Silicon Solar Cells Investigated by Scanning Probe Microscopy
- Intermittent Bias Application in Kelvin Probe Force Microscopy for Accurate Determination of Surface Potential
- Sample-and-Hold Operation in Kelvin Probe Force Microscopy
- Lateral Averaging Effects on Surface Potential Measurements on InAs Dots Studied by Kelvin Probe Force Microscopy
- Sample-and-Hold Imaging for Fast Scanning in Atomic Force Microscopy
- Surface Potential Imaging on InAs Low-Dimensional Nanostructures Studied by Kelvin Probe Force Microscopy
- Magnetic Field Observation around Current Path by Magnetic Force Microscopy
- Photovoltage Mapping on Polycrystalline Silicon Solar Cells by Kelvin Probe Force Microscopy with Piezoresistive Cantilever
- Photovoltage Mapping on Polycrystalline Silicon Solar Cells through Potential Measurements by Atomic Force Microscopy with Piezoresistive Cantilever
- Dual-Bias Modulation Method for Scanning Tunneling Spectroscopy