Sample-and-Hold Operation in Kelvin Probe Force Microscopy
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概要
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To achieve a more accurate determination of surface potential in Kelvin probe force microscopy (KFM), we have proposed and demonstrated a sample-and-hold operation of KFM (SH-KFM), in which a sample-and-hold (S/H) circuit is inserted between an optical deflection sensor and a lock-in amplifier, to sample the deflection signal at a tapping frequency. Owing to the sampling operation, the cantilever bending due to the electrostatic force can be extracted at a desired phase in the tapping oscillation by intentional tuning of a time delay for sampling. We performed SH-KFM measurements on InAs quantum dots, and successfully observed a very clear site dependence of the potential with a large contrast. The results also indicated that the spatial resolution in the potential images was estimated to be better than 10 nm, and that the amplitude of an ac modulation bias in KFM could be reduced to 10 mVp–p without any remarkable degradation of the potential images.
- 2005-08-15
著者
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Ono Shiano
Institute Of Industrial Science University Of Tokyo
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Takahashi Takuji
Institute of Industrial Science and Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
関連論文
- Investigation of Spatial Resolution in Current-Induced Magnetic Field Detection by Magnetic Force Microscopy
- Kelvin Probe Force Microscopy for Surface Potential Measurements on InAs Nanostructures Grown on (110) GaAs Vicinal Substrates
- Photoabsorption Characterization on Surface InAs Nanostructures Using Light-Illuminated Scanning Tunneling Microscopy
- Light-Illuminated STM Studies on InAs Nano-Structures
- Photoabsorption Properties in InAs Wire Structures Investigated by Dual Light Illumination Method in Scanning Tunneling Microscopy
- Photoassisted Kelvin Probe Force Microscopy on Multicrystalline Si Solar Cell Materials
- Local Characterization of Photovoltage on Polycrystalline Silicon Solar Cells by KFM with Piezo-resistive Cantilever
- Formation of Ultra-low Density (${\leq}10^{4}$ cm-2) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method
- Current-Induced Magnetic Field Detection by Magnetic Force Microscopy around a GaAs/AlGaAs Mesa Stripe
- Dual Light Illumination Method in Scanning Tunneling Microscopy for Photoinduced Current Measurements on InAs Wires
- Photothermal Spectroscopic Measurements by Dual Sampling Method in Intermittent-Contact-Mode Atomic Force Microscopy
- Intermittent Bias Application in Kelvin Probe Force Microscopy for Accurate Determination of Surface Potential
- Sample-and-Hold Operation in Kelvin Probe Force Microscopy
- Lateral Averaging Effects on Surface Potential Measurements on InAs Dots Studied by Kelvin Probe Force Microscopy
- Sample-and-Hold Imaging for Fast Scanning in Atomic Force Microscopy
- Surface Potential Imaging on InAs Low-Dimensional Nanostructures Studied by Kelvin Probe Force Microscopy
- Magnetic Field Observation around Current Path by Magnetic Force Microscopy
- Photovoltage Mapping on Polycrystalline Silicon Solar Cells by Kelvin Probe Force Microscopy with Piezoresistive Cantilever
- Photovoltage Mapping on Polycrystalline Silicon Solar Cells through Potential Measurements by Atomic Force Microscopy with Piezoresistive Cantilever
- Dual-Bias Modulation Method for Scanning Tunneling Spectroscopy