Ge Doping Effect on Properties of AgInSe_2 Thin Films
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概要
- 論文の詳細を見る
The effect of Ge doping on the properties of AgInSe_2 thin films has been investigated by the co-evaporation of AgInSe_2 alloy chunks. Se and Ge on Corning 7059 glass substrates. Samples were nearly stoichiometric and contained very small amounts of Ge. They showed a highly [112]-oriented chalcopyrite structure, good optical transmittance spectra in the IR region (λ = 1-2.6μm) and an increase of n-type conductivity compared with the nondoped sample. Raman scattering suggested that the doped Ge atoms replaced some of the In atoms in the chalcopyrite structure. The Ge-doped sample grew uniformly from the beginning of film deposition. [DOI: 10.1143/JJAP.41.1527]
- 社団法人応用物理学会の論文
- 2002-03-15
著者
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Ema Yoshinori
Faculty Of Engineering Shizuoka University
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KATO Hiroshi
Faculty of Science, Kwansei Gakuin University
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Takahashi T
Faculty Of Engineering Shizuoka University
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TAKAHASHI Takahiro
Faculty of Engineering, Shizuoka University
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Kato Hiroshi
Faculty Of Engineering Tokyo Metropolitan University
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