Cu Electromigration Effect on Cu_<2-x>Se Film Properties

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概要

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• Electrical and optical properties and structural change of vacuum-deposited Cu_<2-x>Se films due to electromigration have been investigated using Au/Cu_<2-x>Se/Cu(or Au) samples. DC voltages were applied to them to cause Cu migration. Under the bias in which the polarity of the Cu electrode was negative, Cu in Cu_<2-x>Se films decreased gradually, which increased Cu vacancies and carrier density. Under the bias in which the Cu electrode was positive, Cu ions were supplied to Cu_<2-x>Se films and Cu vacancies were filled, which decreased carrier density and changed the film structure to α-Cu_<2-x>Se. Small blocks of Cu accumulation were formed at the negative electrode edge.

• 社団法人応用物理学会の論文
• 1990-10-20

著者

• Ema Yoshinori

  Faculty Of Engineering Shizuoka University

関連論文

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• Cu Electromigration Effect on Cu_Se Film Properties
• Ge Doping Effect on Properties of AgInSe_2 Thin Films
• Formation and Properties of AgInSe_2 Thin Films Deposited from Alloy Chunks
• Structural Study of AgInSe_2 Thin Films Formed by Solid Phase Selenization

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