5-11 CCDイメージセンサにおける水平駆動電圧低減の検討

概要

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To realize low driving voltage in H-CCD, optimum conditions of barrier regions, such as edge positions of boron implanted areas and doses of boron implantation, are researched by using potential simulations. Simulated results indicate that implanting boron ions not only under second electrode but also under electrode gaps helps suppress potential dips under the gaps and strengthen transfer fields. Under this condition, H-CCD can be driven by the driving voltage under 2V.
社団法人映像情報メディア学会の論文
1995-07-26