新配線小型ショットキバリアIR-CCDイメージセンサ : 情報入力

概要

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A back surface illuminated 130×130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using a new wiring structure, referred to as CLOSE Wiring. CLOSE Wiring, designed to effectively utilize the space over the SB photodiodes, brings about flexibility in clock line designing, high fill factor, and large charge handling capability in a vertical CCD (VCCD). This image sensor uses a progressive scanned interline-scheme, and has a 64.4 percent fill factor and 3.3 μm wide VCCD in a 30 μm□ pixel. The charge handling capability for VCCD achieves 9.8 × 10^5 electrons. The noise equivalent temperature difference obtained was 0.099 K for operation at 120 frames/sec with f/1.3 optics.
1994-03-04