Ground State at Low Landau Level Filling Factors in Two-Dimensional Systems of GaAs/AlGaAs Heterostructures in Strong Magnetic Fields(Research in High Magnetic Fields)

概要

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Integer and fractional quantum Hall effects are interesting phenomena in two-dimensional electron systems (2DES) in strong magnetic fields. In this paper, breakdown of the integer quantum Hall effect (IQHE) at odd integer filling factors at 100 mK and temperature dependence of the fractional quantum Hall effect (FQHE) around the filling facor ν=1/2 at temperatures between 100 mK and 1000 mK in magnetic fields up to 25 T are measured for the 2DES in two AlGaAs/GaAs heterostructures. The results in the IQHE measurements are compared with results at the even filling factors and derive the effective g-factor of about 10 in this system. The results in the FQHE measurements at ν=1/2 shows a logarithmic temperature dependence of the conductivity which is expected in a weakly localized Fermion system in zero magnetic fields.two-dimensional electron systeminteger quantum Hall effectfractional quantum Hall effect
東北大学の論文
1996-07-15