A Practical Limitation of the Precision in Silicon n-MOS Devices as the Quantum Standard Resistor : LATE NEWS
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
-
Kawaji S.
Department Of Physics Gakushuin University
-
Kawaji S.
Department Of Physics Faculty Of Science Gakushuin University
-
Moriyama J.
Department Of Physics Gakushuin University
-
YOSHIHIRO K.
Device Fundamentals Section, Electrotechnical Laboratory
-
KINOSHITA J.
Device Fundamentals Section, Electrotechnical Laboratory
-
INAGAKI K.
Device Fundamentals Section, Electrotechnical Laboratory
-
YAMANOUCHI C.
Device Fundamentals Section, Electrotechnical Laboratory
-
SHIDA K.
Electrical Standards Section, Electrotechnical Laboratory
-
IGARASHI T.
Electrical Standards Section, Electrotechnical Laboratory
-
Yamanouchi C.
Device Fundamentals Section Electrotechnical Laboratory
-
Shida K.
Electrical Standards Section Electrotechnical Laboratory
-
Inagaki K.
Device Fundamentals Section Electrotechnical Laboratory
関連論文
- A New Type of Anomalous Magnetoresistance in Two Dimensional Transport in InAs
- A Practical Limitation of the Precision in Silicon n-MOS Devices as the Quantum Standard Resistor : LATE NEWS
- Localization in two dimensions--experiments in silicon inversion layers (アンダ-ソン局在の総合的研究(昭和57年度文部省科学研究費研究会報告))
- Ground State at Low Landau Level Filling Factors in Two-Dimensional Systems of GaAs/AlGaAs Heterostructures in Strong Magnetic Fields(Research in High Magnetic Fields)