Octahedral Void Structure Observed in Grown-In Defects in the Bulk of Standard Czochralski-Si for MOS LSIs

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-30

著者

• UEKI Takemi

  NTT LSI Laboratories

• Ueki Takemi

  NTT Electronics Corporation

• Takeda Toshikazu

  Murata Manufacturing Co. Ltd.

• Takeda Takayuki

  Department Of Electronic Engineering Aichi Institute Of Technology

• Takeda Tatsuoki

  Department Of Thermonuclear Fusion Research Naka Fusion Estaklishment Japan Atomic Energy Research I

• Itsumi M

  Ntt Electronics Corp.

• Takeda T

  Murata Manufacturing Co. Ltd.

• ITSUMI Manabu

  System Electronics Laboratories

• TAKEDA Tadao

  System Electronics Laboratories

• Ueki Takemi

  Ntt Electronics Corp.

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• Octahedral Void Structure Observed in Grown-In Defects in the Bulk of Standard Czochralski-Si for MOS LSIs
• Octahedral Void Structure Observed at the Grown-In Defects in the Bulk of Standard CZ-Si for MOSLSIs
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