Electron-Cyclotron-Resonance Sputtered SrTiO_3 Thin Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-09-30
著者
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Itsumi M
Ntt Electronics Corp.
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ITSUMI Manabu
System Electronics Laboratories
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Akiya H
Ntt System Electronics Laboratories
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OHFUJI Shin-ichi
System Electronics Laboratories, NTT
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AKIYA Hideo
System Electronics Laboratories, NTT
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Ohfuji S
Ntt Lifestyle And Environmental Technol. Lab. Tokyo Jpn
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- Carbon in Grown-in Defects in Czoehralski Silicon and Its Influence on Gate-Oxide Defects
- Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon
- Octahedral Void Structure Observed in Grown-In Defects in the Bulk of Standard Czochralski-Si for MOS LSIs
- Octahedral Void Structure Observed at the Grown-In Defects in the Bulk of Standard CZ-Si for MOSLSIs
- Dielectric Properties of Electron-Cyclotron-Resonance-Sputtered (Ba, Sr)TiO_3 Films
- Electron-Cyclotron-Resonance Sputtered SrTiO_3 Thin Films
- Four Types and Origins of Transient Si Wafer Deformation with Furnace Insertion and Withdrawal
- Decrease in Electrical Resistivity of W Films on GaAs Substrates after High-Temperature Annealing