Octahedral Void Structure Observed at the Grown-In Defects in the Bulk of Standard CZ-Si for MOSLSIs
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-26
著者
-
UEKI Takemi
NTT LSI Laboratories
-
Takeda Toshikazu
Murata Manufacturing Co. Ltd.
-
Takeda Takayuki
Department Of Electronic Engineering Aichi Institute Of Technology
-
Takeda Tatsuoki
Department Of Thermonuclear Fusion Research Naka Fusion Estaklishment Japan Atomic Energy Research I
-
Itsumi M
Ntt Electronics Corp.
-
Ueki T
Ntt Electronics Corp.
-
Ueki Takemi
Lsi Laboratories Ntt
-
Takeda T
Murata Manufacturing Co. Ltd.
-
ITSUMI Manabu
LSI Laboratories, NTT
-
TAKEDA Tadao
LSI Laboratories, NTT
-
Itsumi Manabu
Lsi Laboratories Ntt
関連論文
- Ferroelectric Properties of (Ag, Li)(Nb, Ta)O_3 Ceramics
- Evaluation of Soft-Error Immunity for 1-V CMOS Memory Cells with MTCMOS Technology (Special Issue on Microelectronic Test Structure)
- Magnetic Properties of SrFe_Co_xO_3
- A 6-Meter Neutron Small-Angle Scattering Spectrometer at KUR
- Humidity Dependence of Photoluminescence in Coumarin-4-Doped Sol-Gel Coating Film
- Optical pH Sensing Properties of Coumarin-4-Doped Sol-Gel Coating Film
- Effects of Substitution of Na and K Ions for Ag Ion in (Ag,Li)Nb0_3 Ceramics
- Small Angle Scattering of Neutrons and X-Rays from Aqueous Dispersions of Dipalmitoyl Phosphatidylcholine
- Neutron Small-Angle Scattering from Single-Walled Liposomes of Egg Phosphatidylcholine
- Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
- Organic Dye-Doped Polymer Films for Optical Phase-Conjugate Proessing
- Novelty Filtering Using Phase Conjugate Wave in Organic Dye-Doped Polymer Films
- Positive- and Negative-Image Processings Based on Photoinduced Anisotropy in Methylred-doped Polyvinyl Alcohol Film
- Shrinkage of Grown-in Defects in Czochralski Silicon During Thermal Annealing in Vacuum
- Observation of Shrinkage Process by Annealing of Grown-in Defect in Cz-Si Crystal
- Carbon in Grown-in Defects in Czoehralski Silicon and Its Influence on Gate-Oxide Defects
- Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon
- Octahedral Void Structure Observed in Grown-In Defects in the Bulk of Standard Czochralski-Si for MOS LSIs
- Octahedral Void Structure Observed at the Grown-In Defects in the Bulk of Standard CZ-Si for MOSLSIs
- Neoclassical MHD Equilibria with Ohmic Current
- Phase Transition between Microemulsion and Lamellar Phases in a C_E_5/Water/n-octane Amphiphilic System
- Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in MOSLSIs
- Effect of Sn2+ Ion Substitution on Dielectric Properties of (Ba,Ca)TiO3 Ferroelectric Ceramics
- Dynamic Image Analysis for Dynamic Scattering Modes in a Nematic Liquid Crystal
- Dielectric Properties of Electron-Cyclotron-Resonance-Sputtered (Ba, Sr)TiO_3 Films
- Electron-Cyclotron-Resonance Sputtered SrTiO_3 Thin Films
- Four Types and Origins of Transient Si Wafer Deformation with Furnace Insertion and Withdrawal
- Mossbauer Spectroscopic Studies on SrFe_Co_xO_3
- Effects of Substitution of Na and K Ions for Ag Ion in (Ag,Li)NbO3 Ceramics
- Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits