Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in MOSLSIs

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Tomita Masato

  Interdisciplinary Research Laboratories Ntt

• Ueki Takemi

  Lsi Laboratories Ntt

• ITSUMI Manabu

  LSI Laboratories, NTT

• Itsumi Manabu

  Lsi Laboratories Ntt

• AKIYA Hideo

  LSI Laboratories, NTT

• YAMAWAKI Masataka

  Interdisciplinary Research Laboratories, NTT

• Akiya Hideo

  Lsi Laboratories Ntt

• Yamawaki Masataka

  Interdisciplinary Research Laboratories Ntt

関連論文

• Octahedral Void Structure Observed at the Grown-In Defects in the Bulk of Standard CZ-Si for MOSLSIs
• Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in MOSLSIs
• Four Types and Origins of Transient Si Wafer Deformation with Furnace Insertion and Withdrawal
• Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits

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