Four Types and Origins of Transient Si Wafer Deformation with Furnace Insertion and Withdrawal

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概要

• 論文の詳細を見る

• Several types of transient deformations (200-1000 μm) of silicon wafers, observed when the wafers are inserted into or withdrawn from a hot horizontal furnace, are shown to be due to small asymmetries (2-10 μm) in the actual wafer shapes. Saddle-type deformation during the insertion process is categorized in two types along axes which are at right angles. The type of deformation depends on a small difference (asymmetry) between the extent of deformation in two crystallographically equivalent (100) directions with the same Young's modulus. During withdrawal, two kinds of bowl-type deformations (concave and convex) are observed. This is also due to small inherent deformations (asymmetry) in the original wafers.

• 社団法人応用物理学会の論文
• 1993-12-15

著者

• Itsumi M

  Ntt Electronics Corp.

• Kai J

  Ntt Advanced Technology Corporation

• Itsumi Manabu

  Lsi Laboratories Ntt

• KAI Junko

  NTT Advanced Technology Corporation

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• Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits

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