Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Ueki Takemi
NTT Electronics Corporation
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Yabumoto N
Ntt Advanced Technol. Corp. Atsugi‐shi Jpn
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Yabumoto Norikuni
Ntt Advanced Technology Corporation
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Ueki T
Ntt Electronics Corp.
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Itsumi Manabu
Ntt System Electronics Laboratories
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WATANABE Masaki
NTT Electronics Corporation
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Ueki Takemi
Ntt Electronics Corp.
関連論文
- Two Kinds of Impurity-related Mark on Thermal Oxides Originating in Octahedral Void Defects
- Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
- Hydrogen Diffusion and Chemical Reactivity with Water on Nearly Ideally H-terminated Si(100) Surface
- Shrinkage of Grown-in Defects in Czochralski Silicon During Thermal Annealing in Vacuum
- Observation of Shrinkage Process by Annealing of Grown-in Defect in Cz-Si Crystal
- Carbon in Grown-in Defects in Czoehralski Silicon and Its Influence on Gate-Oxide Defects
- Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon
- Octahedral Void Structure Observed in Grown-In Defects in the Bulk of Standard Czochralski-Si for MOS LSIs
- Octahedral Void Structure Observed at the Grown-In Defects in the Bulk of Standard CZ-Si for MOSLSIs
- Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
- Atmosphere Dependence in Phosphorus Pileup at the Silicon Surface during Isochronal Heating
- Dielectric Properties of Electron-Cyclotron-Resonance-Sputtered (Ba, Sr)TiO_3 Films
- Effects of Annealing in Ar Gas on Ferroelectric Properties of SrBi_2Ta_2O_9 Thin Films
- Two Kinds of Impurity-related Mark on Thermal Oxides Originating in Octahedral Void Defects
- Carbon in Grown-in Defects in Czochralski Silicon and Its Influence on Gate-Oxide Defects
- Effects of Annealing in Ar Gas on Ferroelectric Properties of SrBi2Ta2O9 Thin Films