Effects of Annealing in Ar Gas on Ferroelectric Properties of SrBi_2Ta_2O_9 Thin Films

スポンサーリンク

概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1998-05-01

著者

• Itsumi Manabu

  Ntt System Electronics Laboratories

• OHFUJI Shin-ichi

  NTT System Electronics Laboratories

関連論文

• Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
• Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
• Atmosphere Dependence in Phosphorus Pileup at the Silicon Surface during Isochronal Heating
• Dielectric Properties of Electron-Cyclotron-Resonance-Sputtered (Ba, Sr)TiO_3 Films
• Effects of Annealing in Ar Gas on Ferroelectric Properties of SrBi_2Ta_2O_9 Thin Films
• Effects of Annealing in Ar Gas on Ferroelectric Properties of SrBi2Ta2O9 Thin Films

スポンサーリンク