Atmosphere Dependence in Phosphorus Pileup at the Silicon Surface during Isochronal Heating

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概要

• 論文の詳細を見る

• The heating atmosphere dependence of the amount of implanted phosphorus that piles up at the silicon surface during a 3-min heating at 800-1000℃ is investigated. The amount is found to be larger in oxygen than in nitrogen at 900℃. It is concluded this is due to a larger amount of phosphorus coming to the surface from inside the silicon in oxygen as a result of oxidation enhanced diffusion and transient enhanced diffusion. Phosphorus depth profiles support this conclusion.

• 社団法人応用物理学会の論文
• 1997-03-15

著者

• Itsumi Manabu

  Ntt System Electronics Laboratories

• SATO Yoshiyuki

  NTT System Electronics Laboratories

• Sato Yoshiyuki

  Ntt Science And Core Technology Laboratory Group

関連論文

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• Atmosphere Dependence in Phosphorus Pileup at the Silicon Surface during Isochronal Heating
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