Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon

スポンサーリンク

概要

• 論文の詳細を見る
• 1997-09-16

著者

• Itsumi Manabu

  Ntt System Electronics Laboratories

関連論文

• Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
• Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
• Atmosphere Dependence in Phosphorus Pileup at the Silicon Surface during Isochronal Heating
• Dielectric Properties of Electron-Cyclotron-Resonance-Sputtered (Ba, Sr)TiO_3 Films
• Effects of Annealing in Ar Gas on Ferroelectric Properties of SrBi_2Ta_2O_9 Thin Films
• Effects of Annealing in Ar Gas on Ferroelectric Properties of SrBi2Ta2O9 Thin Films

スポンサーリンク