Carbon in Grown-in Defects in Czochralski Silicon and Its Influence on Gate-Oxide Defects
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概要
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We systematically investigated the impurities situated in the octahedral void defects in Czochralski silicon crystal by using electron energy-loss spectroscopy and Auger electron spectroscopy. As a result, we found that carbon cohesion was observed on the inner walls of the void defects. The carbon concentration on the inner walls was estimated to be about 2×1014/cm2. This result suggests that void defects with this amount of carbon could seriously affect the integrity of gate-oxides of metal-oxide-silicon integrated circuits.
- 1999-10-15
著者
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Itsumi Manabu
Lifestyle and Environment Technology Laboratories, NTT
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Takeda Tadao
Lifestyle and Environment Technology Laboratories, NTT
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Ueki Takemi
Ntt Electronics Corp.
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Ueki Takemi
NTT Electronics Corp., Atsugi, Kanagawa 243-0198, Japan
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Itsumi Manabu
Lifestyle and Environmental Technology Laboratories, NTT, Atsugi, Kanagawa 243-0198, Japan
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Takeda Tadao
Lifestyle and Environmental Technology Laboratories, NTT, Atsugi, Kanagawa 243-0198, Japan
関連論文
- Two Kinds of Impurity-related Mark on Thermal Oxides Originating in Octahedral Void Defects
- Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
- Shrinkage of Grown-in Defects in Czochralski Silicon During Thermal Annealing in Vacuum
- Observation of Shrinkage Process by Annealing of Grown-in Defect in Cz-Si Crystal
- Carbon in Grown-in Defects in Czoehralski Silicon and Its Influence on Gate-Oxide Defects
- Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon
- Octahedral Void Structure Observed in Grown-In Defects in the Bulk of Standard Czochralski-Si for MOS LSIs
- Two Kinds of Impurity-related Mark on Thermal Oxides Originating in Octahedral Void Defects
- Carbon in Grown-in Defects in Czochralski Silicon and Its Influence on Gate-Oxide Defects