Two Kinds of Impurity-related Mark on Thermal Oxides Originating in Octahedral Void Defects

概要

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We have found that thermal oxidation of Czochralski-siliconsubstrates produces two kinds of impurity-related mark, both of whichare located on the oxides around an octahedral void defect. We believethat both marks originate from the octahedral void defect. One markis circular and an octahedral void defect is situated in the center ofthe mark. The other mark has an anisotropic shape and the octahedralvoid defect is not situated in the center of the anisotropic mark.The signal intensity of the circular mark became weak abruptly withrepeated observations, and, in many cases, the circular mark vanishedafter two or three observations. The signal intensity of theanisotropic mark, on the other hand, gradually became stronger andthen weaker with repeated observations. The thickness of the circularmark and the anisotropic mark was estimated to be 0.5–1.0 nm and15 nm, respectively. Analysis revealed that the concentration ofcarbon was higher in the marks than in the surrounding region.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1999-10-15