Two Kinds of Impurity-related Mark on Thermal Oxides Originating in Octahedral Void Defects

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-10-15

著者

• Maeda Masahiko

  Ntt Telecommunications Energy Technology Laboratories

• Itsumi Manabu

  NTT Lifestyle and Environment Technology Laboratories

• Ohfuji Shin-ichi

  NTT Lifestyle and Environment Technology Laboratories

• Ueki Takemi

  NTT Electronics Corporation

• Ueki Takemi

  Ntt Electronics Corp.

関連論文

• Two Kinds of Impurity-related Mark on Thermal Oxides Originating in Octahedral Void Defects
• Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
• Shrinkage of Grown-in Defects in Czochralski Silicon During Thermal Annealing in Vacuum
• Observation of Shrinkage Process by Annealing of Grown-in Defect in Cz-Si Crystal
• Carbon in Grown-in Defects in Czoehralski Silicon and Its Influence on Gate-Oxide Defects
• Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon
• Octahedral Void Structure Observed in Grown-In Defects in the Bulk of Standard Czochralski-Si for MOS LSIs
• Two Kinds of Impurity-related Mark on Thermal Oxides Originating in Octahedral Void Defects
• Carbon in Grown-in Defects in Czochralski Silicon and Its Influence on Gate-Oxide Defects

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