Resputtering Effect on Y_1Ba_2Cu_3O_<7-d> Thin Films Prepared by RF-Magnetron Sputtering
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概要
- 論文の詳細を見る
Y_1Ba_2Cu_3O_<7-δ> thin films were prepared on MgO(001) substrates by rf-magnetron sputtering. The influence of oxygen partial pressure on film preparation has been investigated quantitatively. The oxygen flow rate near the substrate was controlled by an oxygen inlet ring. As-deposited films in an appropriate condition of oxygen flow rate show a superconducting transition at 83 K. When too much oxygen gas is introduced into a chamber, as-deposited films are damaged by resputtering and their superconducting property disappears. The growth mechanism of the thin films is discussed in terms of the resputtering effect.
- 社団法人応用物理学会の論文
- 1990-05-20
著者
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井村 徹
愛知工業大学 工学部 機械学科
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IMURA Toru
Department of Mechanical Engineering, Aichi Institute of Technology
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KAWAHARA Nobuaki
Nippondenso Research Laboratories
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HOSHIZAKI Hiroki
Nippondenso Research Laboratories
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SHINOHARA Toshiyuki
Nippondenso Research Laboratories
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ENAMI Hiroyoshi
Nippondenso Research Laboratories
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KAWAHARA Nobuaki
Department of Research and Development, Nippondenso Co. Ltd.
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ENAMI Hiroyoshi
Department of Research and Development, Nippondenso Co. Ltd.
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SHINOHARA Toshiyuki
Department of Research and Development, Nippondenso Co. Ltd.
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KAWABATA Sanemasa
Department of Research and Development, Nippondenso Co. Ltd.
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HOSHIZAKI Hiroki
Department of Research and Development, Nippondenso Co. Ltd.
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Kawabata S
Tokyo Inst. Polytechnics Kanagawa Jpn
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Enami H
Nippondenso Research Laboratories
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Shinohara T
Tokyo Univ. Agriculture And Technology Tokyo
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Imura Toru
Department Of Mechanical Engineering Aichi Institute Of Technology
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