Dislocation Generation in the Initiation of Fractures in Silicon Crystals
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概要
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Notched silicon crystals were deformed in tension at elevated temperatures, and the incipient microplasticity associated with the notch was studied by in-situ X-ray topographic observation. Above a stress level of about 2 kg/mm^2 at 700℃, a plastic zone was formed around the notch tip, accompanied by long-range elastic strain. Dislocations were generated on the slip planes parallel to the tensile axis by the operation of a bending moment induced around the notch tip mainly by the activity of two slip systems with the maximum Schmid factor, and the crack propagation is considered to break out as a result.
- 社団法人応用物理学会の論文
- 1982-09-20
著者
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IMURA Toru
Department of Mechanical Engineering, Aichi Institute of Technology
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Imura Toru
Department Of Metallurgy Faculty Of Engineering Nagoya University
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Nishino Yoichi
Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University
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Imura Toru
Department Of Mechanical Engineering Aichi Institute Of Technology
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