In Situ Heating Device for Real Time X-Ray Topography on Crystal Growth from the Melt
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概要
- 論文の詳細を見る
To study the melting and solidification process of a metallic crystal, an in situ heating device for real time X-ray topography has been newly developed and used for the case of a pure aluminium single crystal. Solid-liquid interface remains macroscopically flat and facet growth is not seen. The perfection of slowly grown crystal is better than that of rather rapidly grown one.
- 社団法人応用物理学会の論文
- 1984-08-20
著者
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IMURA Toru
Department of Mechanical Engineering, Aichi Institute of Technology
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Imura Toru
Department Of Metallurgy Faculty Of Engineering Nagoya University
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Kobayashi Tatsumasa
Department Of Metallurgy Faculty Of Engineering Nagoya University
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Imura Toru
Department Of Mechanical Engineering Aichi Institute Of Technology
関連論文
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- Microstructure of Fe-B-Si Alloy Surface Layers Produced by Laser-Quenching
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- Dislocation Generation in the Initiation of Fractures in Silicon Crystals
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