透過型電子顕微鏡法によるα-Si_3N_4ウイスカーの微細構造の解析(<特集>セラミックスの微細構造)

概要

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Alpha-Si3N4 whiskers prepared by the gas-solid reaction have been investigated by transmission electron microscopy (TEM). The correlations among morphology, growth direction and structural defect have been studied. The growth directions of whiskers have been determined accurately by observing the TEM images and corresponding diffraction patterns taken with two different orientations by large angle tilting of the specimens with a double-tilting device in an electron microscope. Defects in whiskers have been observed in detail using various TEM techniques, particularly by high resolution electron microscopy. Two distinct types of the whisker have been found. One is a triangular prism-like shape having the {1010}* growth direction, and the other is a thin tape-like shape having the {1011}* growth direction. The former includes only a small number of defects, whereas the latter has a lot of planar defects only in one side of whiskers. The planar defects in the latter whisker are found to consist of the {0001} and {1012} planar defects. The most probable displacement vector of the {0001} planar defect is determined to be a/2 ‹1010›.
社団法人日本セラミックス協会の論文
1986-08-01