Effects of Underlayer for SrM Ferrite Thin Films (第4回アジア情報記録技術シンポジウム)
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概要
- 論文の詳細を見る
Hexagonal Strontium ferrite thin films were prepared by post-annealing process onto Al_2O_3, SiO_2, ZnO underlayer. The effects of those underlayers were discussed. It is found that SiO_2 underlayer is effective to prevent the reaction between the film and the substrate. Steps were found in the hysteresis of film grown on the Al_2O_3 underlayer indicate the existence of two magnetic phases. The effects of the annealing temperature and the thickness of the underlayer have also been discussed.
- 社団法人映像情報メディア学会の論文
- 1999-11-09
著者
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Liu X
Research Institute Of Magnetic Materials Lanzhou University
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Liu X
Research Institute Of Magnetism And Magnetic Materials Lanzhou University
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Liu X
Lanzhou Univ. Lanzhou Chn
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MORISAKO Akimitsu
Department of Information Engineering, Faculty of Engineering, Shinshu University
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Liu Xiaoxi
Research Institute Of Magnetic Materials Lanzhou University
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Liu Xiaoxi
Department Of Information Engineering Shinshu University
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Liu X
Institute Of Theoretical Physics Lanzhou University
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Yang Z
The Research Institute Of Magnetic Materials Lanzhou University
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Yang Zheng
Research Institute Of Magnetic Materials Lanzhou University
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Wei Fulin
Research Institute of Magnetic Materials, Lanzhou University
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MATSUMOTO Mitsunori
Department of Information Engineering, Shinshu University
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Bai Jiammin
Research Institute of Magnetic Materials, Lanzhou University
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Takei Shigeto
Department of Information Engineering, Shinshu University
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Morisako Akimitsu
Department Of Information Engineering Shinshu University
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Morisako Akimitsu
Department Of Information Engineering Faculty Of Engineering Shinshu University
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Bai Jianmin
Research Institute Of Magnetic Materials Lanzhou University
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Wei Fulin
Research Institute Of Magnetic Materials Lanzhou University
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Wei Fulin
Research Institute Of Magnetic Materials
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Zheng Yang
Data Storage Institute
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Yang Zheng
Research Institute Of Magnetic Materials
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Matsumoto Mitsunori
Department Of Information Engineering Shinshu University
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Takei Shigeto
Department Of Information Engineering Shinshu University
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Yang Zheng
Research Institute Of Magnetic And Materials Lanzhou University
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