Structure and Magnetic Properties of RF Sputtered Fe-Ta-N films
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概要
- 論文の詳細を見る
Fe-Ta-N films with three compositions were prepared by using RF reactive diode sputtering technique, using composite targets with Ar+N_2 mixed gas. The influence of partial nitrogen pressure P_<N2> and annealing temperature T_A on structure and magnetic properties of these films was investigated. The addition of Ta effectively inhibits the formation of Fe_4N Phase and improves the thermal stability of Fe-Ta-N films. The addition of Ta and N atoms decreases the grain size and causes some lattice expension in the films
- 社団法人電子情報通信学会の論文
- 1996-11-22
著者
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Yang Zheng
Research Institute Of Magnetic Materials Lanzhou University
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Xian Chun-tao
Research Institute Of Magnetic Materials Lanzhou University
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Yang Zheng
Research Institute Of Magnetic Materials
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WEI Fu-lin
Applied Magnetic Lab., State Education Commission.
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MA Bing
Research Institute of Magnetic Materials, Lanzhou University
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Wei Fu-lin
Applied Magnetic Lab. State Education Commission.
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Ma Bing
Research Institute Of Magnetic Materials Lanzhou University
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Yang Zheng
Research Institute Of Magnetic And Materials Lanzhou University
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YANG Zheng
Research Institute of Magnetic Materials, Lanzhou University
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