A STUDY ON MAGNETIC DOMAIN STRUCTURE AND DOMAIN WALL STATE IN SMALL MR SENSOR
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概要
- 論文の詳細を見る
With regard to practical structure of element, the transition process of domain structure during magnetizatization reversal in MR thin film sensor has been observed and investigated by wet and dry Bitter pattern technique. It is shown that the domain wall mergence and the wall-state transition during this incoherent magnetization rotation is closely related to Barkhauson jumps in the sensor, and also it is noted that the hooklike domain that appears at the link point of sensor and leads is involved in the irreversible transition.
- 社団法人電子情報通信学会の論文
- 1996-11-21
著者
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Zhou Di
Information Storage Research Center Shanghai Jiao Tong University
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Zhou Yong
Information Storage Research Center Shanghai Jiao Tong University
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Wei Fulin
Research Institute Of Magnetic Materials
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Yu Jinyue
Information Storage Research Center, Shanghai Jiao Tong University
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Yu Jinyue
Information Storage Research Center Shanghai Jiao Tong University
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- Study on the Fe-Al-N soft magnetic thin films (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム〔英文〕)
- The preparation and magnetic properties of strontium ferrite thin film for high density recording (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム〔英文〕)
- Study on The Fe-Al-N Soft Magnetic Thin Films
- The Preparation and Magnetic Properties of Strontium Ferrite Thin Film for High Density Recording
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- Magnetic Properties and Crystallographic of Barium Ferrite Thin Films Prepared by Alternate Deposition (第4回アジア情報記録技術シンポジウム)
- Effects of Underlayer for SrM Ferrite Thin Films (第4回アジア情報記録技術シンポジウム)
- The Magnetic Properties of La-Zn Substituted SrM Ferrite Nano-particles