CCP-NOLを用いたCPP-GMRスピンバルブ膜(<特集>「磁性薄膜作製技術」)

概要

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We investigated the film performance and nanostructure of current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin-valve film with a current-confined path nano-oxide layer (CCP-NOL). By applying ion-assisted oxidation (IAO) for the CCP-NOL formation, we enhanced the MR ratio to 5.4% at a small RA value of 500mΩμm^2 for conventional Co_<90>Fe_<10> layers. Furthermore, the use of bcc-Fe_<50>Co_<50> also increased the MR ratio to 8.2% at a small RA value of 580mΩμm^2. A modified Valet-Fert model for the CCP-NOL showed that the MR enhancement by the IAO is due to the improvement of resistivity of the CCP, and that by Fe_<50>Co_<50> is due to a larger spin-dependent interface scattering effect. Analysis by cross-sectional TEM and three-dimensional atom probe confirmed the formation of the CCP-NOL structure. The CPP-GMR spin-valve film with the CCP-NOL is extendable to future high-density recording heads due to its potential for a higher MR ratio at a small value of RA.
社団法人日本磁気学会の論文
2005-09-01