レーザ描画による窒化アルミニウムの選択気相成長

概要

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Selective growth of aluminum nitride (AIN) has been performed by the Ar ion laser-enhanced reactive vapor deposition method. Si (100) is used as a substrate, and is selectively heated with laser direction. Simultaneously, 99.999% aluminum (AI) is evaporated from a hexagonal boron nitride crucible in a NH_3 atmosphere. The Al reacts with NH_3 on the substrate surface which is heated to more than 450℃ by laser scanning, then AlN is formed on the laser-scanned portion. Not only scanning speed but scanning length are required to be appropriate values so that the average thickness of the Al layer deposited during an interval of laser direction is less than 0.2nm. The conditions for selective growth are found to be a scanning speed of 40mm/s, a scanning length of 8.0mm, and a deposition rate of 1.0nm/s. The use of a single-wavelength and single-mode (TEM_<00>) laser beam is found to be effective for depositing a sharp selective growth pattern of AlN.
1996-11-25