透明導電性薄膜の機械的作製法の開発

概要

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Transparent conducting thin fillns made of Indium oxide (In_2O_3) have been prepared by a mechanical process conposed of rolling' and oxidizing stages without vacuum procesSeS. The In ingot was rolled to approximately 5μm in thich first, and then the In sheet was pretreated by corona discharge in the air. Finally, the sheet was annealed in a furnace in the temperature range from 300℃ to 700℃. The corona discharge pretreatment was found to have an important role to oxidize the In sheets due to the introduction of the oxygen species through micro pits formed by electron and ion bombardments. The transmission coefficient of the In_2O_3 film prepared by this process was 40%, when the corona discharge time was 3 h and heat treatment temperature was 700℃. The resistivity of this ITO film was 8.0 × l0 ^<-5>Ω・m according to the conventional four-probe measurement.
1999-05-25