Magneto-plasma Resonance in Semoconductors(I)
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概要
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Theory of th emagneto-plasma resonance in semiconductors is developed for the general case where several kinds of free carriers are moving under a static magnetic field. The absorption and dispersion relations are obtained which are applicable to the usual semiconductors such as Si and Ge. It is shown that, under favorable conditions, the resultant plasma frequency can be deterrnined in a way as if there were only one kind of carrier which has the reduced mass of all the carriers concerned. The experimental method to determine the parameter of the magneto-plasma resonance is also discussed.
- 社団法人日本物理学会の論文
- 1960-08-05
著者
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Date Muneyuki
Department Of Physics Faculty Of Science Osaka University
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Date Muneyuki
Department Of Physics Faculity Of Science Osaka University
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