ULSI 配線上への無電解ニッケルめっきによるバリアメタルの形成

概要

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Combination of the VLK (Very Low-k) films and Copper interconnection is mandatory technologies for the device formation of ULSI (Ultra Large-Scale Integration). Generally, the barrier layers as a SiN films are formed with CVD (Chemical Vapor Deposition) on the whole wafer. In this study, electroless nickel deposition is evaluated for the barrier layers formation as a substitution of the SiN films. This process is more promising and advantageous for the selective film formation. Controlling the palladium catalyzing and plating conditions can accomplish selective electroless nickel deposition on copper pads and lines (pads diameter : 0.3μm and trench width : 0.25μm). We also confirmed that selective nickel deposition on copper pads can be achieved by using DMAB or hydrazine as a substitution of palladium catalyst.
社団法人エレクトロニクス実装学会の論文
2001-07-01