分子線エピタキシによる面創成に関する研究(第1報) : 付着分子エネルギーおよび付着分子密度がSi-Siホモエピタキシャル成長機構に及ぼす影響

概要

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Surface formation mechanism in a silicon-silicon homo-epitaxial molecules' growing process is carefully investigated by the help of AFM and RHEED. Observation of epitaxially grown surfaces showed that their crystallographic properties were improved much by having given a proper amount of thermal energy to adsorbed molecules through substrates, however, were not influenced by their density. On the other hand, the surface geometrical features were affected by both of the thermal energy and molecules' density, in addition, by a substrate crystal orientation. Namely, many nuclei were first formed and combined together with an epitaxial growth in the case of (100) substrate, however, many atomic layer steps were formed, extended and piled each other in the case of (111) substrate. Generally, the higher energy and lower density of adsorbed molecules could realize more coarse and larger nuclei and piled steps. These experimental results could be well explained by identifying their epitaxial growth mode first, then, taking either possible migration distances of adsorbed molecules and probability of their impingement into account.
公益社団法人精密工学会の論文
2000-05-05