3次元集積回路電極用Siマイクロ孔内側壁に超臨界流体を利用してCuを堆積した際の被覆特性の検討

概要

論文の詳細を見る
Supercritical fluids are high-pressure media possessing both high diffusivity and solvent capability. Metal thin films can be deposited in supercritical fluids from an organometallic compound (precursor) through thermochemical reactions. In this study, copper thin films were deposited in silicon microholes of 10 μm diameter and 350 μm depth to the fabricate through-silicon vias (TSVs) used in three-dimensional silicon integrated circuits. The fabrication temperatures and pressures were varied respectively within 180−280°C and 1−20 MPa, respectively. The maximum coating depth decreased with deposition temperature, although a peak maximum of the depth was observed at around 10 MPa. The dependence of temperature and pressure on the coating depth was discussed using a Thiele model, which describes the balance between diffusive transport and consumption of the precursor. The model results and experimental results showed good agreement. Diffusion constants of the precursor in the silicon microholes were estimated from the observed maximum coating depths.
2009-08-01