20302 超臨界CO_2を用いたCu薄膜の大面積堆積へのアプローチ(OS3 機械工学が支援する微細加工技術(半導体・MEMS・NEMS)(1),オーガナイズドセッション)

概要

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We researched the dependences of film thickness distribution on CO_2 flow rate and temperature, using a one-dimensional flow-type reaction system, for supercritical fluid chemical deposition (SCFD) of Cu. It was found that the film thickness became thinner with the distance from the fluid inlet. This is because the Cu precursor is consumed and its density is decreased. When the flow rate was high, the deposition rate decreased near the inlet of the reactor because of the limitation of heat transfer from the reactor to the deposition ambient. Based on these results, we discussed the necessity of a pre-heating system and studied a possible reactor structure large-area deposition.
一般社団法人日本機械学会の論文
2010-03-09