非平衡スパッタリング法によるTi-Ni形状記憶合金薄膜の作製とその通電加熱に伴う形状記憶挙動

概要

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We have optimized the deposition conditions for fabricating Ti-Ni shape memory films by dc unbalanced magnetron sputtering using Taguchi method. The deposited films were annealed at 600°C for 60 min for crystallization and memorization into a flat shape after dissolving the Cu substrates. These films were subjected to DSC measurements and thermal cycling tests under a constant stress. The Joule heat induced shape memory behavior was also characterized by a specially designed tensile testing machine. The transformation temperature of Ni-rich films was found to be lower than RT. On the other hand, those of Ti-47∼49.4 at%Ni films were higher than RT, which means they can be expected to show the shape memory effect at RT. The Ti-47∼49.4 at%Ni films showed a perfect shape recovery under a constant stress by Joule heat of less than 0.1 J.
日本真空協会の論文
2008-05-20