分子線エピタキシー法によるZnS/ZnOヘテロ接合の作製と界面反応

概要

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Molecular beam epitaxial growth of a wurtzite ZnS/ZnO heterostructure on a-plane sapphire substrate is reported. X-ray diffraction and cathodoluminescence measurements revealed the formation of a ZnOS alloy layer at the heterointerface. Bandgap bowing parameter for the ZnO-ZnS binary system was roughly estimated to be ∼4.1 eV using an intense visible emission from the interface layer. Such a large bowing is due to the difference in electronegativity between S and O atoms. It is also found that the visible emission peak was pronounced by an ex-situ thermal annealing due to the progress of alloying.
日本真空協会の論文
2005-03-20