DAMキャビティ構造を用いたKu帯シリコン受動素子

概要

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We present RF silicon passive devices fabricated by a newly developed dielectric-air-metal (DAM) cavity process. The demonstrated components are grounded coplanar waveguide (GCPW), lumped-element hybrid for Ku-band application, and thru/shunt-type MEMS switch, which were fabricated by front-surface-only processes on a silicon substrate. They consist of transmission lines on a silicon nitride membrane suspended above a metallized deep cavity. The demonstrated depths are 6 μm and 30 μm for GCPWs, 30 μm for hybrids, and 2 μm for switches. The DAM cavity process is adaptive to the RF MEMS modules, which have several kinds of components with different cavity depths to each other on the same surface of the substrate. Good agreement between the measured and simulated results validates the proposed structure utilizing the DAM cavity process. For instance, in the hybrid, we obtained 2.03 dB and 2.18 dB as the insertion losses and 21.63 dB as return loss at 12 GHz.
社団法人電気学会の論文
2004-10-01