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Semiconductor Leading Edge Technologies Inc. (selete) | 論文
- Systematic studies on Fermi level pining of Hf-based high-k gate stacks
- Full-Metal-Gate Integration of Dual-Metal-Gate HfSiON CMOS Transistors by Using Oxidation-Free Dummy-Mask Process
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
- First-principles studies on metal induced gap states (MIGS) at metal/high-k HfO_2 interfaces
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
- Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
- Development of Resist Materials for EUVL
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
- Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition
- Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
- Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
- Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs(Microelectronic Test Structures)
- Atomic Force Microscopy Study on the Dissolution Processes of Chemically Amplified Resists for KrF Excimer Laser Lithography
- Effects of Photoacid Generator Concentration and Post-Exposure Bake Temperature on Dissolution Behavior of ArF Excimer Laser Resists
- Nonhomogeneous Pattern Formation in the Dissolution Processes of Novolak-Diazonaphthoquinone Resists
- 157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers