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Microelectronics Research Laboratories, NEC Corporation | 論文
- Compact Realization of Phase-Locked Loop Using Digital Control (Special Issue on Circuit Technologies for Memory and Analog LSIs)
- A Capacitor over Bit-Line (COB) Stacked Capacitor Cell Using Local Interconnect Layer for 64 MbDRAMs
- Radiation Damage in MOS Devices Underlying an Electron Beam Annealed SOI Structure : A-6: SILICON CRYSTALS
- 0.15μm CMOS Devices with Reduced Junction Capacitance
- Selective Epitaxial Growth of Si and Si_Ge_x Films by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
- Temperature Dependence of Etching with Molecular Fluorine on Si(111) Surface
- Crystallization of Amorphous Silicon with Clean Surfaces
- Suppression of Surface Roughening on Strained Si/SiGe Layers by Lowering Surface Stress
- TiN as a Phosphorus Outdiffusion Barrier Layer for WSi_x/Doped-Polysilicon Structures (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Uniform Si-SEG and Ti/SEG-Si Thickness Ratio Control for Ti-Salicided Sub-Quarter-Micron CMOS Devices
- Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p^+ Poly-Si Gates
- AlGaAs/GaAs Heterojunction Bipolar Transistor ICs for Optical Transmission Systems (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
- A Precise Method for Determining AlGaAs/GaAs HBT Large-Signal Circuit Parameters Using Bias-Dependent Noise Parameters and Small-Signal S-Parameters
- A Highly Stable Al-Si Contact to Mo-Silicided Shallow Junctions
- Low-Voltage Switching Characteristics of SrBi_2Ta_2O_9 Capacitors
- Ultra-Uniform CMP Using a Hydro Film Buffered Chuck (Hydro Chuck)
- Model for Al Etch-Rate Enhancement at Low Temperatures
- Silicon Surface Imperfection Probed with a Novel X-Ray Diffraction Technique and Its Influence on the Reliability of Thermally Grown Silicon Oxide
- Mechanisms of Mo or Mo-Silicide/n^+ -Si Ohmic Contact Degradation Induced by High-Temperature Annealing
- Degradation Mechanisms on Mo or Mo-silicide/n^+ -Si Ohmic Contacts on High Temperature Annealing : LATE NEWS