A Highly Stable Al-Si Contact to Mo-Silicided Shallow Junctions
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概要
- 論文の詳細を見る
Highly stable (up to 550℃) contacts have been realized in an Al-2%Si contact to n^+-p and p^+-n shallow junctions (X_j〜0.16 μm) covered by a 0.1 μm thick uniform MoSi_2 layer, which was formed by the ion implantation through metal ITM technique. Low contact resistance was maintained, at submicron (0.5 μm square) Al-Si/MoSi_2 contacts, after 550℃ sintering for 30 minutes.
- 社団法人応用物理学会の論文
- 1987-03-20
著者
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OKABAYASHI Hidekazu
Microelectronics Research Laboratories, NEC Corporation
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Iida Yasuo
Microelectronics Research Laboratories
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Iida Yasuo
Microelectronics Research Laboratories Nec Corporation
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Iida Yasuo
Central Research Laboratories Nippon Electric Co. Ltd.
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Nagasawa Eiji
Microelectronics Research Laboratories Nippon Electric Co. Ltd.
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Nagasawa Eiji
Microelectronics Research Laboratories Nec Corporation
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Okabayashi Hidekazu
Microelectronics Research Laboratories Nec Corporation
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