Okabayashi Hidekazu | Microelectronics Research Laboratories Nec Corporation
スポンサーリンク
概要
関連著者
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OKABAYASHI Hidekazu
Microelectronics Research Laboratories, NEC Corporation
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Okabayashi Hidekazu
Microelectronics Research Laboratories Nec Corporation
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Higuchi Kohei
Microelectronics Research Labs
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Okabayashi H
Nec Corp. Ibaraki Jpn
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Morimoto M
Division Of Physics Graduate School Of Science Hokkaido University
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HIGUCHI Koichi
Department of Applied Chemistry, Faculty of Engineering, Gunma University
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Higuchi K
Department Of Applied Chemistry Faculty Of Engineering Gunma University
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Nagasawa Eiji
Microelectronics Research Laboratories Nippon Electric Co. Ltd.
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Nagasawa Eiji
Microelectronics Research Laboratories Nec Corporation
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KANAMORI Masaru
Fundamental Research Laboratories, Nippon Electric Co., Ltd.
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Kanamori M
First Research Dept. Research & Development Div. Nok Corporation
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Morimoto Mitsutaka
Microelectronics Research Laboratories Nippon Electric Co. Ltd.
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Kanamori Masaru
Fundamental Research Laboratories Nec Corporation
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Morimoto Mayumi
北海道大学 大学院
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Saitoh Shuichi
Microelectronics Research Labs. Nippon Electric Co. Ltd.
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MOGAMI Tohru
Microelectronics Research Laboratories, NEC Corporation
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Mogami Tohru
Microelectronics Research Laboratories Nec Corporation
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MORIMOTO Mitsutaka
Microelectronics Research Laboratories, NEC Corporation
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Iida Yasuo
Microelectronics Research Laboratories
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Iida Yasuo
Microelectronics Research Laboratories Nec Corporation
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Iida Yasuo
Central Research Laboratories Nippon Electric Co. Ltd.
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Okabayashi Hidekazu
Microelectronics Research Labs. Nippon Electric Co. Ltd.
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Okabayashi Hidekazu
Microelectronics Research Laboratories Nippon Electric Co. Ltd.
著作論文
- Planarized Via-Hole Filling with Molybdenum by Bias Sputtering : Techniques, Instrumentations and Measurement
- Radiation Damage in MOS Devices Underlying an Electron Beam Annealed SOI Structure : A-6: SILICON CRYSTALS
- A Highly Stable Al-Si Contact to Mo-Silicided Shallow Junctions
- Mechanisms of Mo or Mo-Silicide/n^+ -Si Ohmic Contact Degradation Induced by High-Temperature Annealing
- Degradation Mechanisms on Mo or Mo-silicide/n^+ -Si Ohmic Contacts on High Temperature Annealing : LATE NEWS
- A Self-Aligned Mo-Silicide Formation