Degradation Mechanisms on Mo or Mo-silicide/n^+ -Si Ohmic Contacts on High Temperature Annealing : LATE NEWS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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HIGUCHI Koichi
Department of Applied Chemistry, Faculty of Engineering, Gunma University
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Higuchi K
Department Of Applied Chemistry Faculty Of Engineering Gunma University
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OKABAYASHI Hidekazu
Microelectronics Research Laboratories, NEC Corporation
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Higuchi Kohei
Microelectronics Research Labs
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KANAMORI Masaru
Fundamental Research Laboratories, Nippon Electric Co., Ltd.
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Kanamori M
First Research Dept. Research & Development Div. Nok Corporation
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Kanamori Masaru
Fundamental Research Laboratories Nec Corporation
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Okabayashi H
Nec Corp. Ibaraki Jpn
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Okabayashi Hidekazu
Microelectronics Research Laboratories Nec Corporation
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- Degradation Mechanisms on Mo or Mo-silicide/n^+ -Si Ohmic Contacts on High Temperature Annealing : LATE NEWS
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