SIMS Study of SiCl_4-Treated SiO_2 Oxide Films

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1982-12-20

著者

• Kanamori Masaru

  Fundamental Research Laboratories Nippon Electric Co. Ltd.

• Kanamori Masaru

  Fundamental Research Laboratories Nec Corporation

関連論文

• Behaviours of Thermally Induced Microdefects in Heavily Doped Silicon Wafers
• Microdefects Formed in Carbon-Doped CZ Silicon Crystals by Oxygen Precipitation Heat Treatment
• Mechanisms of Mo or Mo-Silicide/n^+ -Si Ohmic Contact Degradation Induced by High-Temperature Annealing
• Degradation Mechanisms on Mo or Mo-silicide/n^+ -Si Ohmic Contacts on High Temperature Annealing : LATE NEWS
• SIMS Study of SiCl_4-Treated SiO_2 Oxide Films

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